ReP USP - Resultado da busca

Trabalho de evento
Low-cost ultraviolet radiation sensor using epoxy-resin optical filters over MOS photodiodes (2023)
Santos, Fernando L Nogueira; Santos Filho, Sebastião Gomes dos ; Martino, João Antonio
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: SENSOR, RADIAÇÃO ULTRAVIOLETA
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ABNT
SANTOS, Fernando L Nogueira e SANTOS FILHO, Sebastião Gomes dos e MARTINO, João Antonio. Low-cost ultraviolet radiation sensor using epoxy-resin optical filters over MOS photodiodes. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302558. Acesso em: 18 nov. 2024.
APA
Santos, F. L. N., Santos Filho, S. G. dos, & Martino, J. A. (2023). Low-cost ultraviolet radiation sensor using epoxy-resin optical filters over MOS photodiodes. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302558
NLM
Santos FLN, Santos Filho SG dos, Martino JA. Low-cost ultraviolet radiation sensor using epoxy-resin optical filters over MOS photodiodes [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302558
Vancouver
Santos FLN, Santos Filho SG dos, Martino JA. Low-cost ultraviolet radiation sensor using epoxy-resin optical filters over MOS photodiodes [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302558
Trabalho de evento
Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs (2023)
Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
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ABNT
ARAÚJO, Gustavo Vinicius de e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302603. Acesso em: 18 nov. 2024.
APA
Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302603
NLM
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Vancouver
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Trabalho de evento
Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)
Ribeiro, Arllen D.R; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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ABNT
RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 18 nov. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Trabalho de evento
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 18 nov. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Trabalho de evento
Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms (2023)
Canales, Bruno Godoy; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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CANALES, Bruno Godoy e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302593. Acesso em: 18 nov. 2024.
APA
Canales, B. G., Martino, J. A., & Agopian, P. G. D. (2023). Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302593
NLM
Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593
Vancouver
Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593
Trabalho de evento
Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET (2023)
Ramos, Daniel Augusto; Sasaki, Kátia Regina Akemi ; Rangel, Ricardo Cardoso; Duarte, Pedro Henrique; Martino, João Antonio
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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ABNT
RAMOS, Daniel Augusto et al. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302644. Acesso em: 18 nov. 2024.
APA
Ramos, D. A., Sasaki, K. R. A., Rangel, R. C., Duarte, P. H., & Martino, J. A. (2023). Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302644
NLM
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Vancouver
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Artigo de periodico
Back gate bias influence on BESOI ISFET sensitivity (2023)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Sasaki, Kátia Regina Akemi ; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: ECS Transactions. Unidade: EP
Subjects: ELETRODO, REFRATÁRIOS, METALOGRAFIA
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ABNT
DUARTE, Pedro Henrique et al. Back gate bias influence on BESOI ISFET sensitivity. ECS Transactions, v. 111, n. 1, p. 279-284, 2023Tradução . . Disponível em: https://doi.org/10.1149/11101.0279ecst. Acesso em: 18 nov. 2024.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Sasaki, K. R. A., Agopian, P. G. D., & Martino, J. A. (2023). Back gate bias influence on BESOI ISFET sensitivity. ECS Transactions, 111( 1), 279-284. doi:10.1149/11101.0279ecst
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Sasaki KRA, Agopian PGD, Martino JA. Back gate bias influence on BESOI ISFET sensitivity [Internet]. ECS Transactions. 2023 ; 111( 1): 279-284.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1149/11101.0279ecst
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Sasaki KRA, Agopian PGD, Martino JA. Back gate bias influence on BESOI ISFET sensitivity [Internet]. ECS Transactions. 2023 ; 111( 1): 279-284.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1149/11101.0279ecst
Trabalho de evento
Temperature influence on operational transconductance amplifier designed with triple gate TFET (2022)
Camargo, Raphael Gil; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: ANÁLISE TÉRMICA, AMPLIFICADORES
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ABNT
CAMARGO, Raphael Gil e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Temperature influence on operational transconductance amplifier designed with triple gate TFET. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9880962. Acesso em: 18 nov. 2024.
APA
Camargo, R. G., Martino, J. A., & Agopian, P. G. D. (2022). Temperature influence on operational transconductance amplifier designed with triple gate TFET. In SBMICRO. Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9880962
NLM
Camargo RG, Martino JA, Agopian PGD. Temperature influence on operational transconductance amplifier designed with triple gate TFET [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880962
Vancouver
Camargo RG, Martino JA, Agopian PGD. Temperature influence on operational transconductance amplifier designed with triple gate TFET [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880962
Trabalho de evento
Experimental behavior of line-TFET applied to low-dropout voltage regulator (2022)
Silva, Wenita de Lima; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: SBMICRO: proceedings. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: SEMICONDUTORES, ESTABILIDADE, CIRCUITOS ANALÓGICOS
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ABNT
SILVA, Wenita de Lima e AGOPIAN, Paula Ghedini Der e MARTINO, João Antonio. Experimental behavior of line-TFET applied to low-dropout voltage regulator. 2022, Anais.. [s.L.]: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881041. Acesso em: 18 nov. 2024.
APA
Silva, W. de L., Agopian, P. G. D., & Martino, J. A. (2022). Experimental behavior of line-TFET applied to low-dropout voltage regulator. In SBMICRO: proceedings. [s.L.]: IEEE. doi:10.1109/SBMICRO55822.2022.9881041
NLM
Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041
Vancouver
Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041
Trabalho de evento
Nanowire TFET with different source compositions applied to low-dropout voltage regulator (2022)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Nanowire TFET with different source compositions applied to low-dropout voltage regulator. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881035. Acesso em: 18 nov. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2022). Nanowire TFET with different source compositions applied to low-dropout voltage regulator. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881035
NLM
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035
Trabalho de evento
Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's (2022)
Ribeiro, Arllen D.R.; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO, INOVAÇÕES TECNOLÓGICAS
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ABNT
RIBEIRO, Arllen D.R. et al. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881005. Acesso em: 18 nov. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2022). Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. In SBMICRO. Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881005
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Trabalho de evento
Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation (2022)
Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: FRACTAIS, MÉTODO DE MONTE CARLO, SIMULAÇÃO
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ABNT
FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881030. Acesso em: 18 nov. 2024.
APA
Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2022). Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881030
NLM
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881030
Vancouver
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881030
Trabalho de evento
Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET (2022)
Carvalho, Henrique Lanfredi; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Agopian, Paula Ghedini Der ; Yojo, Leonardo Shimizu; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, DISPOSITIVOS ELETRÔNICOS, ALUMÍNIO, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
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ABNT
CARVALHO, Henrique Lanfredi et al. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9880960. Acesso em: 18 nov. 2024.
APA
Carvalho, H. L., Rangel, R. C., Sasaki, K. R. A., Agopian, P. G. D., Yojo, L. S., & Martino, J. A. (2022). Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9880960
NLM
Carvalho HL, Rangel RC, Sasaki KRA, Agopian PGD, Yojo LS, Martino JA. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880960
Vancouver
Carvalho HL, Rangel RC, Sasaki KRA, Agopian PGD, Yojo LS, Martino JA. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880960
Trabalho de evento
Experimental analysis of MISHEMT multiple conductions from 200K to 450K (2022)
Perina, Welder Fernandes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, TEMPERATURA
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ABNT
PERINA, Welder Fernandes e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Experimental analysis of MISHEMT multiple conductions from 200K to 450K. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881049. Acesso em: 18 nov. 2024.
APA
Perina, W. F., Martino, J. A., & Agopian, P. G. D. (2022). Experimental analysis of MISHEMT multiple conductions from 200K to 450K. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881049
NLM
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049
Vancouver
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049
Artigo de periodico
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures (2018)
Martino, Márcio Dalla Valle; Claeys, Cor ; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Simoen, Eddy ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
MARTINO, Márcio Dalla Valle et al. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, v. 33, n. 7, p. 075012, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aac4fd. Acesso em: 18 nov. 2024.
APA
Martino, M. D. V., Claeys, C., Agopian, P. G. D., Rooyackers, R., Simoen, E., & Martino, J. A. (2018). Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, 33( 7), 075012. doi:10.1088/1361-6641/aac4fd
NLM
Martino MDV, Claeys C, Agopian PGD, Rooyackers R, Simoen E, Martino JA. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2018 ; 33( 7): 075012.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1361-6641/aac4fd
Vancouver
Martino MDV, Claeys C, Agopian PGD, Rooyackers R, Simoen E, Martino JA. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2018 ; 33( 7): 075012.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1361-6641/aac4fd
Artigo de periodico
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K (2018)
Caparroz, Luís Felipe Vicentis; Agopian, Paula Ghedini Der ; Claeys, Cor ; Simoen, Eddy ; Bordallo, Caio Cesar Mendes ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidades: EP, EACH
Subjects: TEMPERATURA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAPARROZ, Luís Felipe Vicentis et al. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, v. 33, n. 6, p. 065003, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aabab3. Acesso em: 18 nov. 2024.
APA
Caparroz, L. F. V., Agopian, P. G. D., Claeys, C., Simoen, E., Bordallo, C. C. M., & Martino, J. A. (2018). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, 33( 6), 065003. doi:10.1088/1361-6641/aabab3
NLM
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
Vancouver
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
Artigo de periodico
The impact of the temperature on In0.53Ga0.47As nTFETs (2018)
Bordallo, Caio Cesar Mendes ; Mocuta, Dan; Collaert, Nadine ; Alian, A; Simoen, Eddy ; Claeys, Cor ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Mols, Yannick; Van Dooren, A; Verhulst, Anne S; Lin, D
Source: Composants nanoélectroniques. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, v. 18, n. 1, 2018Tradução . . Disponível em: https://doi.org/10.21494/iste.op.2018.0224. Acesso em: 18 nov. 2024.
APA
Bordallo, C. C. M., Mocuta, D., Collaert, N., Alian, A., Simoen, E., Claeys, C., et al. (2018). The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, 18( 1). doi:10.21494/iste.op.2018.0224
NLM
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 nov. 18 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Vancouver
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 nov. 18 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Artigo de periodico
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies (2017)
Itocazu, Vitor Tatsuo ; Sonnenberg, Victor ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ITOCAZU, Vitor Tatsuo et al. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 82-88, 2017Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.455. Acesso em: 18 nov. 2024.
APA
Itocazu, V. T., Sonnenberg, V., Martino, J. A., Simoen, E., & Claeys, C. (2017). Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, 12( 2), 82-88. doi:10.29292/jics.v12i2.455
NLM
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2024 nov. 18 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Vancouver
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2024 nov. 18 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Artigo de periodico
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures (2017)
Martino, Márcio Dalla Valle; Claeys, Cor ; Rooyackers, Rita; Simoen, Eddy ; Agopian, Paula Ghedini Der ; Vandooren, A; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, Márcio Dalla Valle et al. Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, v. 32, n. 5, p. 055015, 2017Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aa6764. Acesso em: 18 nov. 2024.
APA
Martino, M. D. V., Claeys, C., Rooyackers, R., Simoen, E., Agopian, P. G. D., Vandooren, A., & Martino, J. A. (2017). Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, 32( 5), 055015. doi:10.1088/1361-6641/aa6764
NLM
Martino MDV, Claeys C, Rooyackers R, Simoen E, Agopian PGD, Vandooren A, Martino JA. Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2017 ; 32( 5): 055015.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1361-6641/aa6764
Vancouver
Martino MDV, Claeys C, Rooyackers R, Simoen E, Agopian PGD, Vandooren A, Martino JA. Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2017 ; 32( 5): 055015.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1088/1361-6641/aa6764
Artigo de periodico
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017)
Bordallo, Caio Cesar Mendes ; Collaert, Nadine ; Claeys, Cor ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Mols, Yannick; Alian, A; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, v. 64, n. 9, p. 3595-3600, 2017Tradução . . Disponível em: https://doi.org/10.1109/ted.2017.2721110. Acesso em: 18 nov. 2024.
APA
Bordallo, C. C. M., Collaert, N., Claeys, C., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, 64( 9), 3595-3600. doi:10.1109/ted.2017.2721110
NLM
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Vancouver
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2024 nov. 18 ] Available from: https://doi.org/10.1109/ted.2017.2721110

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