The impact of the temperature on In0.53Ga0.47As nTFETs (2018)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- DOI: 10.21494/iste.op.2018.0224
- Assunto: SEMICONDUTORES
- Language: Inglês
- Source:
- Título: Composants nanoélectroniques
- ISSN: 2516-3914
- Volume/Número/Paginação/Ano: v.18, n. 1,2018
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
BORDALLO, Caio Cesar Mendes et al. The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, v. 18, n. 1, 2018Tradução . . Disponível em: https://doi.org/10.21494/iste.op.2018.0224. Acesso em: 20 jan. 2026. -
APA
Bordallo, C. C. M., Mocuta, D., Collaert, N., Alian, A., Simoen, E., Claeys, C., et al. (2018). The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, 18( 1). doi:10.21494/iste.op.2018.0224 -
NLM
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2026 jan. 20 ] Available from: https://doi.org/10.21494/iste.op.2018.0224 -
Vancouver
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2026 jan. 20 ] Available from: https://doi.org/10.21494/iste.op.2018.0224 - Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
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Informações sobre o DOI: 10.21494/iste.op.2018.0224 (Fonte: oaDOI API)
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