Study of line-TFET analog performance comparing with other TFET and MOSFET architectures (2017)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- DOI: 10.1016/j.sse.2016.10.021
- Assunto: SEMICONDUTORES
- Language: Inglês
- Source:
- Título: Solid-State Electronics Volume 128, February 2017, Pages 43-47
- Volume/Número/Paginação/Ano: v. 128, p. 43-47, Fev 2017
- Conference titles: EUROSOI-ULIS 2016
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
AGOPIAN, Paula Ghedini Der et al. Study of line-TFET analog performance comparing with other TFET and MOSFET architectures. Solid-State Electronics Volume 128, February 2017, Pages 43-47. [S.l.]: Escola Politécnica, Universidade de São Paulo. Disponível em: https://doi.org/10.1016/j.sse.2016.10.021. Acesso em: 20 jan. 2026. , 2017 -
APA
Agopian, P. G. D., Simoen, E., Vandooren, A., Rooyackers, R., Thean, A., Claeys, C., & Martino, J. A. (2017). Study of line-TFET analog performance comparing with other TFET and MOSFET architectures. Solid-State Electronics Volume 128, February 2017, Pages 43-47. Escola Politécnica, Universidade de São Paulo. doi:10.1016/j.sse.2016.10.021 -
NLM
Agopian PGD, Simoen E, Vandooren A, Rooyackers R, Thean A, Claeys C, Martino JA. Study of line-TFET analog performance comparing with other TFET and MOSFET architectures [Internet]. Solid-State Electronics Volume 128, February 2017, Pages 43-47. 2017 ; 128 43-47.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/j.sse.2016.10.021 -
Vancouver
Agopian PGD, Simoen E, Vandooren A, Rooyackers R, Thean A, Claeys C, Martino JA. Study of line-TFET analog performance comparing with other TFET and MOSFET architectures [Internet]. Solid-State Electronics Volume 128, February 2017, Pages 43-47. 2017 ; 128 43-47.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/j.sse.2016.10.021 - The impact of the temperature on In0.53Ga0.47As nTFETs
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- Influence of interface trap density on vertical NW-TFETs with different source composition
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Threshold voltage extraction in Tunnel FETs
- Temperature influence on nanowire tunnel field effect transistors
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
Informações sobre o DOI: 10.1016/j.sse.2016.10.021 (Fonte: oaDOI API)
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