Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- DOI: 10.1016/j.sse.2013.02.037
- Subjects: SILÍCIO; IRRADIAÇÃO
- Language: Inglês
- Source:
- Título do periódico: Solid-State Electronics Volume 90, December 2013, Pages 155-159
- Volume/Número/Paginação/Ano: v. 90, p. 155-159, Dec 2013
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
AGOPIAN, Paula Ghedini Der et al. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, v. 90, p. 155-159, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.037. Acesso em: 24 abr. 2024. -
APA
Agopian, P. G. D., Bordallo, C. C. M., Simoen, E., Martino, J. A., & Claeys, C. (2013). Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, 90, 155-159. doi:10.1016/j.sse.2013.02.037 -
NLM
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037 -
Vancouver
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037 - Influence of interface trap density on vertical NW-TFETs with different source composition
- Temperature influence on nanowire tunnel field effect transistors
- Threshold voltage extraction in Tunnel FETs
- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- The impact of the temperature on In0.53Ga0.47As nTFETs
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
Informações sobre o DOI: 10.1016/j.sse.2013.02.037 (Fonte: oaDOI API)
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