Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- DOI: 10.1109/ted.2016.2533360
- Assunto: SEMICONDUTORES
- Language: Inglês
- Source:
- Título do periódico: IEEE Transactions on Electron Devices
- Volume/Número/Paginação/Ano: v. 63, n. 4, p. 1658-1665, Abr 2016
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
NEVES, Felipe S et al. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, v. 63, n. 4, p. 1658-1665, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2533360. Acesso em: 19 abr. 2024. -
APA
Neves, F. S., Agopian, P. G. D., Cretu, B., Rooyackers, R., Vandooren, A., Simoen, E., et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63( 4), 1658-1665. doi:10.1109/ted.2016.2533360 -
NLM
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1109/ted.2016.2533360 -
Vancouver
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1109/ted.2016.2533360 - Influence of interface trap density on vertical NW-TFETs with different source composition
- Temperature influence on nanowire tunnel field effect transistors
- Threshold voltage extraction in Tunnel FETs
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- The impact of the temperature on In0.53Ga0.47As nTFETs
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
Informações sobre o DOI: 10.1109/ted.2016.2533360 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
