Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K (2018)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; CAPARROZ, LUIS HUMBERTO - EACH
- Unidades: EP; EACH
- DOI: 10.1088/1361-6641/aabab3
- Subjects: TEMPERATURA; SEMICONDUTORES
- Language: Inglês
- Source:
- Título: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 33, n. 6, p. 065003, 2018
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
CAPARROZ, Luís Felipe Vicentis et al. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, v. 33, n. 6, p. 065003, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aabab3. Acesso em: 23 jan. 2026. -
APA
Caparroz, L. F. V., Agopian, P. G. D., Claeys, C., Simoen, E., Bordallo, C. C. M., & Martino, J. A. (2018). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, 33( 6), 065003. doi:10.1088/1361-6641/aabab3 -
NLM
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/1361-6641/aabab3 -
Vancouver
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/1361-6641/aabab3 - Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Influence of interface trap density on vertical NW-TFETs with different source composition
- The impact of the temperature on In0.53Ga0.47As nTFETs
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
- Temperature influence on nanowire tunnel field effect transistors
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
- Threshold voltage extraction in Tunnel FETs
Informações sobre o DOI: 10.1088/1361-6641/aabab3 (Fonte: oaDOI API)
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