The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; BORDALLO, CAIO CESAR MENDES - EP
- Unidade: EP
- DOI: 10.1109/ted.2017.2721110
- Subjects: MICROELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Source:
- Título do periódico: IEEE Transactions on Electron Devices
- Volume/Número/Paginação/Ano: v. 64, n. 9, p. p. 3595-3600, Sept. 2017
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
BORDALLO, Caio Cesar Mendes et al. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, v. 64, n. 9, p. 3595-3600, 2017Tradução . . Disponível em: https://doi.org/10.1109/ted.2017.2721110. Acesso em: 19 set. 2024. -
APA
Bordallo, C. C. M., Collaert, N., Claeys, C., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, 64( 9), 3595-3600. doi:10.1109/ted.2017.2721110 -
NLM
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2024 set. 19 ] Available from: https://doi.org/10.1109/ted.2017.2721110 -
Vancouver
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2024 set. 19 ] Available from: https://doi.org/10.1109/ted.2017.2721110 - Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K
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Informações sobre o DOI: 10.1109/ted.2017.2721110 (Fonte: oaDOI API)
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