Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs (2014)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; TEIXEIRA, FERNANDO FERRARI - EP ; BORDALLO, CAIO CESAR MENDES - EP
- Unidade: EP
- DOI: 10.29292/jics.v9i2.394
- Subjects: MICROELETRÔNICA; RAIOS X
- Language: Inglês
- Source:
- Título: Journal of Integrated Circuits and Systems
- Volume/Número/Paginação/Ano: v. 9, n. 2, p. 97-102, Jan 2014
- Status:
- Artigo publicado em periódico de acesso aberto (Gold Open Access)
- Versão do Documento:
- Versão publicada (Published version)
- Acessar versão aberta:
-
ABNT
TEIXEIRA, Fernando Ferrari et al. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.394. Acesso em: 07 maio 2026. -
APA
Teixeira, F. F., Martino, J. A., Bordallo, C. C. M., Silveira, M. A. G. da, Agopian, P. G. D., Simoen, E., & Claeys, C. (2014). Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, 9( 2), 97-102. doi:10.29292/jics.v9i2.394 -
NLM
Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2026 maio 07 ] Available from: https://doi.org/10.29292/jics.v9i2.394 -
Vancouver
Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2026 maio 07 ] Available from: https://doi.org/10.29292/jics.v9i2.394 - Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
- The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs
- Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K
- InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
- Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
- Threshold voltage extraction in Tunnel FETs
Informações sobre a disponibilidade de versões do artigo em acesso aberto coletadas automaticamente via oaDOI API (Unpaywall).
Por se tratar de integração com serviço externo, podem existir diferentes versões do trabalho (como preprints ou postprints), que podem diferir da versão publicada.
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
