Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K (2016)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; BORDALLO, CAIO CESAR MENDES - EP
- Unidade: EP
- DOI: 10.1088/0268-1242/31/12/124001
- Subjects: SEMICONDUTORES; MICROELETRÔNICA
- Language: Inglês
- Source:
- Título: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 31, n. 12, p. 124001, 2016
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
BORDALLO, Caio Cesar Mendes et al. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K. Semiconductor Science and Technology, v. 31, n. 12, p. 124001, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/12/124001. Acesso em: 23 jan. 2026. -
APA
Bordallo, C. C. M., Vandooren, A., Rooyackers, R., Mols, Y., Alian, A., Agopian, P. G. D., & Martino, J. A. (2016). Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K. Semiconductor Science and Technology, 31( 12), 124001. doi:10.1088/0268-1242/31/12/124001 -
NLM
Bordallo CCM, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K [Internet]. Semiconductor Science and Technology. 2016 ; 31( 12): 124001.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/31/12/124001 -
Vancouver
Bordallo CCM, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K [Internet]. Semiconductor Science and Technology. 2016 ; 31( 12): 124001.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/31/12/124001 - InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
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Informações sobre o DOI: 10.1088/0268-1242/31/12/124001 (Fonte: oaDOI API)
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