InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature (2016)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; BORDALLO, CAIO CESAR MENDES - EP
- Unidade: EP
- DOI: 10.1063/1.4971830
- Subjects: NANOTECNOLOGIA; MICROELETRÔNICA
- Language: Inglês
- Source:
- Título: Applied Physics Letters
- Volume/Número/Paginação/Ano: v. 109, n. 24, p. 243502, 2016
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
ALIAN, A et al. InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature. Applied Physics Letters, v. 109, n. 24, p. 243502, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4971830. Acesso em: 23 jan. 2026. -
APA
Alian, A., Agopian, P. G. D., Verhulist, A., Verreck, D., Bordallo, C. C. M., Martino, J. A., & Alian1, Y. M. 1. (2016). InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature. Applied Physics Letters, 109( 24), 243502. doi:10.1063/1.4971830 -
NLM
Alian A, Agopian PGD, Verhulist A, Verreck D, Bordallo CCM, Martino JA, Alian1 YM1. InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature [Internet]. Applied Physics Letters. 2016 ; 109( 24): 243502.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1063/1.4971830 -
Vancouver
Alian A, Agopian PGD, Verhulist A, Verreck D, Bordallo CCM, Martino JA, Alian1 YM1. InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature [Internet]. Applied Physics Letters. 2016 ; 109( 24): 243502.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1063/1.4971830 - Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K
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Informações sobre o DOI: 10.1063/1.4971830 (Fonte: oaDOI API)
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