Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation (2014)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; BORDALLO, CAIO CESAR MENDES - EP ; TEIXEIRA, FERNANDO FERRARI - EP
- Unidade: EP
- DOI: 10.1088/0268-1242/29/12/125015
- Subjects: RAIOS X; MICROELETRÔNICA
- Language: Inglês
- Source:
- Título do periódico: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 29, n. 12, p. 125015
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
BORDALLO, Caio Cesar Mendes et al. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, v. 29, n. 12, p. 125015, 2014Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/29/12/125015. Acesso em: 23 abr. 2024. -
APA
Bordallo, C. C. M., Martino, J. A., Teixeira, F. F., Silveira, M. A. G. da, Agopian, P. G. D., Simoen, E., & Claeys, C. (2014). Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, 29( 12), 125015. doi:10.1088/0268-1242/29/12/125015 -
NLM
Bordallo CCM, Martino JA, Teixeira FF, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation [Internet]. Semiconductor Science and Technology. 2014 ; 29( 12): 125015.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1088/0268-1242/29/12/125015 -
Vancouver
Bordallo CCM, Martino JA, Teixeira FF, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation [Internet]. Semiconductor Science and Technology. 2014 ; 29( 12): 125015.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1088/0268-1242/29/12/125015 - Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
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Informações sobre o DOI: 10.1088/0268-1242/29/12/125015 (Fonte: oaDOI API)
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