Nanowire TFET with different source compositions applied to low-dropout voltage regulator (2022)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; TOLÊDO, RODRIGO DO NASCIMENTO - EP
- Unidade: EP
- DOI: 10.1109/SBMICRO55822.2022.9881035
- Subjects: TRANSISTORES; NANOELETRÔNICA; CIRCUITOS ANALÓGICOS
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway
- Date published: 2022
- Source:
- Título: SBMICRO
- Volume/Número/Paginação/Ano: p. 1-4
- Conference titles: Symposium on Microelectronics Technology
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Nanowire TFET with different source compositions applied to low-dropout voltage regulator. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881035. Acesso em: 08 out. 2024. -
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2022). Nanowire TFET with different source compositions applied to low-dropout voltage regulator. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881035 -
NLM
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 out. 08 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035 -
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 out. 08 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035 - Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data
- Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies
- Regulador linear de baixa queda de tensão projetado com TFETs fabricados em nanofios de silício
- Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data
- Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis
- Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
Informações sobre o DOI: 10.1109/SBMICRO55822.2022.9881035 (Fonte: oaDOI API)
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