Combined l and series resistance extraction of ldd mosfets (1995)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 1995
- Source:
- Título: Extended Abstracts
- Volume/Número/Paginação/Ano: v.1 , n.527, p.812-3, 1995
- Conference titles: Symposium on Low Temperature Electronics and High Temperature Superconductivity
-
ABNT
SCHEUTELKAMP, R et al. Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 31 dez. 2025. , 1995 -
APA
Scheutelkamp, R., Martino, J. A., Simoen, E., Deferm, L., & Claeys, C. (1995). Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. Pennington: Escola Politécnica, Universidade de São Paulo. -
NLM
Scheutelkamp R, Martino JA, Simoen E, Deferm L, Claeys C. Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. 1995 ;1 ( 527): 812-3.[citado 2025 dez. 31 ] -
Vancouver
Scheutelkamp R, Martino JA, Simoen E, Deferm L, Claeys C. Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. 1995 ;1 ( 527): 812-3.[citado 2025 dez. 31 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
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