Combined l and series resistance extraction of ldd mosfets (1995)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 1995
- Source:
- Título: Extended Abstracts
- Volume/Número/Paginação/Ano: v.1 , n.527, p.812-3, 1995
- Conference titles: Symposium on Low Temperature Electronics and High Temperature Superconductivity
-
ABNT
SCHEUTELKAMP, R et al. Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 16 fev. 2026. , 1995 -
APA
Scheutelkamp, R., Martino, J. A., Simoen, E., Deferm, L., & Claeys, C. (1995). Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. Pennington: Escola Politécnica, Universidade de São Paulo. -
NLM
Scheutelkamp R, Martino JA, Simoen E, Deferm L, Claeys C. Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. 1995 ;1 ( 527): 812-3.[citado 2026 fev. 16 ] -
Vancouver
Scheutelkamp R, Martino JA, Simoen E, Deferm L, Claeys C. Combined l and series resistance extraction of ldd mosfets. Extended Abstracts. 1995 ;1 ( 527): 812-3.[citado 2026 fev. 16 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
- Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
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