Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance (2009)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings: ULIS 2009
- Conference titles: International Conference on Ultimate Integration on Silicon
-
ABNT
RODRIGUES, M et al. Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance. 2009, Anais.. New York: IEEE, 2009. . Acesso em: 28 mar. 2024. -
APA
Rodrigues, M., Mercha, A., Simoen, E., Collaert, N., Claeys, C., & Martino, J. A. (2009). Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance. In Proceedings: ULIS 2009. New York: IEEE. -
NLM
Rodrigues M, Mercha A, Simoen E, Collaert N, Claeys C, Martino JA. Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance. Proceedings: ULIS 2009. 2009 ;[citado 2024 mar. 28 ] -
Vancouver
Rodrigues M, Mercha A, Simoen E, Collaert N, Claeys C, Martino JA. Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance. Proceedings: ULIS 2009. 2009 ;[citado 2024 mar. 28 ] - The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C
- Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C
- Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
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- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
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