Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets (1993)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Source:
- Título: Solid State Electronics
- Volume/Número/Paginação/Ano: v.36, n.6 , p.827-32, jun. 1993
-
ABNT
MARTINO, João Antonio et al. Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics, v. 36, n. ju 1993, p. 827-32, 1993Tradução . . Acesso em: 14 fev. 2026. -
APA
Martino, J. A., Simoen, E., Magnusson, U., Rotondaro, A. L. P., & Claeys, C. (1993). Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics, 36( ju 1993), 827-32. -
NLM
Martino JA, Simoen E, Magnusson U, Rotondaro ALP, Claeys C. Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics. 1993 ;36( ju 1993): 827-32.[citado 2026 fev. 14 ] -
Vancouver
Martino JA, Simoen E, Magnusson U, Rotondaro ALP, Claeys C. Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets. Solid State Electronics. 1993 ;36( ju 1993): 827-32.[citado 2026 fev. 14 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
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