Experimental analysis of MISHEMT multiple conductions from 200K to 450K (2022)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; PERINA, WELDER FERNANDES - EP
- Unidade: EP
- DOI: 10.1109/SBMICRO55822.2022.9881049
- Subjects: TRANSISTORES; TEMPERATURA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway
- Date published: 2022
- Source:
- Título: SBMICRO
- Volume/Número/Paginação/Ano: p. 1-4
- Conference titles: Symposium on Microelectronics Technology
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PERINA, Welder Fernandes e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Experimental analysis of MISHEMT multiple conductions from 200K to 450K. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881049. Acesso em: 09 jan. 2026. -
APA
Perina, W. F., Martino, J. A., & Agopian, P. G. D. (2022). Experimental analysis of MISHEMT multiple conductions from 200K to 450K. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881049 -
NLM
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2026 jan. 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049 -
Vancouver
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2026 jan. 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049 - Experimental study of MISHEMT from 450 K down to 200 K for analog applications
- Experimental study of MISHEMT from 450k down to 200 k for analog applications
- Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K
- MISHEMT intrinsic voltage gain under multiple channel output characteristics
- Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C
- Estudo do comportamento de transistores de efeito de campo de alta mobilidade de elétrons (MISHEMT) operando em diferentes temperaturas
- Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C
- TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
- Carriers mobility extraction methods for triple-gate FinFET
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Informações sobre o DOI: 10.1109/SBMICRO55822.2022.9881049 (Fonte: oaDOI API)
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