MISHEMT intrinsic voltage gain under multiple channel output characteristics (2023)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; CANALES, BRUNO GODOY - EP ; PERINA, WELDER FERNANDES - EP
- Unidade: EP
- DOI: 10.1088/1361-6641/acfa1f
- Subjects: TRANSISTORES; SEMICONDUTORES
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Semiconductor Science and Technology
- ISSN: 1361-6641
- Volume/Número/Paginação/Ano: v. 38, n. 11, p. 1-6, 2023. Article nº 115004
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CANALES, Bruno Godoy et al. MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, v. 38, n. 11, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/acfa1f. Acesso em: 10 jan. 2026. -
APA
Canales, B. G., Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, 38( 11), 1-6. doi:10.1088/1361-6641/acfa1f -
NLM
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f -
Vancouver
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2026 jan. 10 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f - Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms
- Experimental analysis of MISHEMT multiple conductions from 200K to 450K
- Experimental study of MISHEMT from 450 K down to 200 K for analog applications
- Experimental study of MISHEMT from 450k down to 200 k for analog applications
- Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K
- Design of operational transconductance amplifier with gate-all-around nanosheet MOSFET using experimental data from room temperature to 200°C
- Estudo do comportamento de transistores de efeito de campo de alta mobilidade de elétrons (MISHEMT) operando em diferentes temperaturas
- Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C
- TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
- Carriers mobility extraction methods for triple-gate FinFET
Informações sobre o DOI: 10.1088/1361-6641/acfa1f (Fonte: oaDOI API)
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