ReP USP - Resultado da busca

Trabalho de evento
Liquid helium temperature operation of graded-channel SOI nMOSFETs (2012)
Souza, Michelly de ; Kilchytska, Valeriya ; Flandre, Denis ; Pavanello, Marcelo Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SOUZA, Michelly de et al. Liquid helium temperature operation of graded-channel SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0135ecst. Acesso em: 08 out. 2025.
APA
Souza, M. de, Kilchytska, V., Flandre, D., & Pavanello, M. A. (2012). Liquid helium temperature operation of graded-channel SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0135ecst
NLM
Souza M de, Kilchytska V, Flandre D, Pavanello MA. Liquid helium temperature operation of graded-channel SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0135ecst
Vancouver
Souza M de, Kilchytska V, Flandre D, Pavanello MA. Liquid helium temperature operation of graded-channel SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0135ecst
Trabalho de evento
On the variability of the low-frequency noise in UTBOX SOI nMOSFETs (2012)
Simoen, Eddy ; Caño de Andrade, Maria Glória ; Almeida, Luciano Mendes; Aoulaiche, Marc; Caillat, Christian; Jurczak, Malgorzata; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SIMOEN, Eddy et al. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0051ecst. Acesso em: 08 out. 2025.
APA
Simoen, E., Caño de Andrade, M. G., Almeida, L. M., Aoulaiche, M., Caillat, C., Jurczak, M., & Claeys, C. (2012). On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0051ecst
NLM
Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0051ecst
Vancouver
Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0051ecst
Trabalho de evento
Accounting for short channel effects in the drain current modeling of junctionless nanowire transistors (2012)
Trevisoli, Renan ; Doria, Rodrigo Trevisoli ; Souza, Michelly de ; Pavanello, Marcelo Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
TREVISOLI, Renan et al. Accounting for short channel effects in the drain current modeling of junctionless nanowire transistors. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0207ecst. Acesso em: 08 out. 2025.
APA
Trevisoli, R., Doria, R. T., Souza, M. de, & Pavanello, M. A. (2012). Accounting for short channel effects in the drain current modeling of junctionless nanowire transistors. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0207ecst
NLM
Trevisoli R, Doria RT, Souza M de, Pavanello MA. Accounting for short channel effects in the drain current modeling of junctionless nanowire transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0207ecst
Vancouver
Trevisoli R, Doria RT, Souza M de, Pavanello MA. Accounting for short channel effects in the drain current modeling of junctionless nanowire transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0207ecst
Trabalho de evento
Intrinsic gate capacitances of n-type junctionless nanowire transistors using a three-dimensional device simulation and experimental measurements (2012)
Mariniello, Genaro ; Doria, Rodrigo Trevisoli ; Trevisoli, Renan ; Souza, Michelly de ; Pavanello, Marcelo Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MARINIELLO, Genaro et al. Intrinsic gate capacitances of n-type junctionless nanowire transistors using a three-dimensional device simulation and experimental measurements. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0231ecst. Acesso em: 08 out. 2025.
APA
Mariniello, G., Doria, R. T., Trevisoli, R., Souza, M. de, & Pavanello, M. A. (2012). Intrinsic gate capacitances of n-type junctionless nanowire transistors using a three-dimensional device simulation and experimental measurements. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0231ecst
NLM
Mariniello G, Doria RT, Trevisoli R, Souza M de, Pavanello MA. Intrinsic gate capacitances of n-type junctionless nanowire transistors using a three-dimensional device simulation and experimental measurements [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0231ecst
Vancouver
Mariniello G, Doria RT, Trevisoli R, Souza M de, Pavanello MA. Intrinsic gate capacitances of n-type junctionless nanowire transistors using a three-dimensional device simulation and experimental measurements [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0231ecst
Trabalho de evento
Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response (2012)
Roque Huanca, Danilo ; Elias, Vinícius F; Salcedo, Walter Jaimes
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ROQUE HUANCA, Danilo e ELIAS, Vinícius F e SALCEDO, Walter Jaimes. Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0315ecst. Acesso em: 08 out. 2025.
APA
Roque Huanca, D., Elias, V. F., & Salcedo, W. J. (2012). Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0315ecst
NLM
Roque Huanca D, Elias VF, Salcedo WJ. Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0315ecst
Vancouver
Roque Huanca D, Elias VF, Salcedo WJ. Porous silicon photonic crystals: influence of electrolyte composition on the nanostructure and the optical response [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0315ecst
Trabalho de evento
Application of junctionless nanowire transistor in the self-cascode configuration to improve the analog performance (2012)
Doria, Rodrigo Trevisoli ; Trevisoli, Renan ; Souza, Michelly de ; Pavanello, Marcelo Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DORIA, Rodrigo Trevisoli et al. Application of junctionless nanowire transistor in the self-cascode configuration to improve the analog performance. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0215ecst. Acesso em: 08 out. 2025.
APA
Doria, R. T., Trevisoli, R., Souza, M. de, & Pavanello, M. A. (2012). Application of junctionless nanowire transistor in the self-cascode configuration to improve the analog performance. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0215ecst
NLM
Doria RT, Trevisoli R, Souza M de, Pavanello MA. Application of junctionless nanowire transistor in the self-cascode configuration to improve the analog performance [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0215ecst
Vancouver
Doria RT, Trevisoli R, Souza M de, Pavanello MA. Application of junctionless nanowire transistor in the self-cascode configuration to improve the analog performance [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0215ecst
Trabalho de evento
Simulation of PECVD SiO2 deposition using a cellular automata approach (2012)
Colombo, Fábio Belotti; Páez Carreño, Marcelo Nelson
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
COLOMBO, Fábio Belotti e PÁEZ CARREÑO, Marcelo Nelson. Simulation of PECVD SiO2 deposition using a cellular automata approach. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0297ecst. Acesso em: 08 out. 2025.
APA
Colombo, F. B., & Páez Carreño, M. N. (2012). Simulation of PECVD SiO2 deposition using a cellular automata approach. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0297ecst
NLM
Colombo FB, Páez Carreño MN. Simulation of PECVD SiO2 deposition using a cellular automata approach [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0297ecst
Vancouver
Colombo FB, Páez Carreño MN. Simulation of PECVD SiO2 deposition using a cellular automata approach [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0297ecst
Trabalho de evento
Microlens array fabricated by gray-scale lithography maskless system (2012)
Cirino, Giuseppe Antonio; Lopera Aristizábal, Sergio; Montagnoli, Arlindo Neto ; Mansano, Ronaldo Domingues ; Gonçalves Neto, Luiz
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidades: EP, EESC
Assunto: MICROELETRÔNICA
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ABNT
CIRINO, Giuseppe Antonio et al. Microlens array fabricated by gray-scale lithography maskless system. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0339ecst. Acesso em: 08 out. 2025.
APA
Cirino, G. A., Lopera Aristizábal, S., Montagnoli, A. N., Mansano, R. D., & Gonçalves Neto, L. (2012). Microlens array fabricated by gray-scale lithography maskless system. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0339ecst
NLM
Cirino GA, Lopera Aristizábal S, Montagnoli AN, Mansano RD, Gonçalves Neto L. Microlens array fabricated by gray-scale lithography maskless system [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0339ecst
Vancouver
Cirino GA, Lopera Aristizábal S, Montagnoli AN, Mansano RD, Gonçalves Neto L. Microlens array fabricated by gray-scale lithography maskless system [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0339ecst
Trabalho de evento
Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes (2012)
Abe, Igor Yamamoto ; Pereyra, Inés
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ABE, Igor Yamamoto e PEREYRA, Inés. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0255ecst. Acesso em: 08 out. 2025.
APA
Abe, I. Y., & Pereyra, I. (2012). Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0255ecst
NLM
Abe IY, Pereyra I. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0255ecst
Vancouver
Abe IY, Pereyra I. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0255ecst
Trabalho de evento
TiO2 nanotubes production and characterization (2012)
Fraga, Tiago Marques; Albertin, Katia Franklin ; Pereyra, Inés
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
FRAGA, Tiago Marques e ALBERTIN, Katia Franklin e PEREYRA, Inés. TiO2 nanotubes production and characterization. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0199ecst. Acesso em: 08 out. 2025.
APA
Fraga, T. M., Albertin, K. F., & Pereyra, I. (2012). TiO2 nanotubes production and characterization. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0199ecst
NLM
Fraga TM, Albertin KF, Pereyra I. TiO2 nanotubes production and characterization [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0199ecst
Vancouver
Fraga TM, Albertin KF, Pereyra I. TiO2 nanotubes production and characterization [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0199ecst
Trabalho de evento
Three-dimensional acoustic metamaterial with localized resonances (2012)
Arredondo Champi, Hipólito Alan ; Bustamante, Rina Huamanrayme ; Salcedo, Walter Jaimes
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ARREDONDO CHAMPI, Hipólito Alan e BUSTAMANTE, Rina Huamanrayme e SALCEDO, Walter Jaimes. Three-dimensional acoustic metamaterial with localized resonances. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0543ecst. Acesso em: 08 out. 2025.
APA
Arredondo Champi, H. A., Bustamante, R. H., & Salcedo, W. J. (2012). Three-dimensional acoustic metamaterial with localized resonances. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0543ecst
NLM
Arredondo Champi HA, Bustamante RH, Salcedo WJ. Three-dimensional acoustic metamaterial with localized resonances [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0543ecst
Vancouver
Arredondo Champi HA, Bustamante RH, Salcedo WJ. Three-dimensional acoustic metamaterial with localized resonances [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0543ecst
Trabalho de evento
The MOS device applied to hydrogenated gas sensor device (2012)
Magalhães, Filipe Bento ; Braga, Mauro Sergio ; Ramírez Fernandez, Francisco Javier ; Salcedo, Walter Jaimes
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MAGALHÃES, Filipe Bento et al. The MOS device applied to hydrogenated gas sensor device. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0465ecst. Acesso em: 08 out. 2025.
APA
Magalhães, F. B., Braga, M. S., Ramírez Fernandez, F. J., & Salcedo, W. J. (2012). The MOS device applied to hydrogenated gas sensor device. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0465ecst
NLM
Magalhães FB, Braga MS, Ramírez Fernandez FJ, Salcedo WJ. The MOS device applied to hydrogenated gas sensor device [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0465ecst
Vancouver
Magalhães FB, Braga MS, Ramírez Fernandez FJ, Salcedo WJ. The MOS device applied to hydrogenated gas sensor device [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0465ecst
Trabalho de evento
Design of a variable-interference filter (VIF) for compact high resolution wavelength detectors (2012)
Silva, Celso Manoel da; Sayão, André Cozza; Silva, Daniela Fiorini da; Silva, Tiago Fiorini da ; Onmori, Roberto Koji
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidades: EP, Interunidades em Ensino de Ciências
Assunto: MICROELETRÔNICA
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ABNT
SILVA, Celso Manoel da et al. Design of a variable-interference filter (VIF) for compact high resolution wavelength detectors. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0331ecst. Acesso em: 08 out. 2025.
APA
Silva, C. M. da, Sayão, A. C., Silva, D. F. da, Silva, T. F. da, & Onmori, R. K. (2012). Design of a variable-interference filter (VIF) for compact high resolution wavelength detectors. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0331ecst
NLM
Silva CM da, Sayão AC, Silva DF da, Silva TF da, Onmori RK. Design of a variable-interference filter (VIF) for compact high resolution wavelength detectors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0331ecst
Vancouver
Silva CM da, Sayão AC, Silva DF da, Silva TF da, Onmori RK. Design of a variable-interference filter (VIF) for compact high resolution wavelength detectors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0331ecst
Trabalho de evento
Dip Pen nanolithography using a polyacrylonitrile based ink (2012)
Vega-Manzano, Omar ; Perez Medina, Gallardo J.; Furlan, Rogerio; Silva, Ana Neilde Rodrigues da ; Rosa, Luis G.
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VEGA-MANZANO, Omar et al. Dip Pen nanolithography using a polyacrylonitrile based ink. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0241ecs. Acesso em: 08 out. 2025.
APA
Vega-Manzano, O., Perez Medina, G. J., Furlan, R., Silva, A. N. R. da, & Rosa, L. G. (2012). Dip Pen nanolithography using a polyacrylonitrile based ink. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0241ecs
NLM
Vega-Manzano O, Perez Medina GJ, Furlan R, Silva ANR da, Rosa LG. Dip Pen nanolithography using a polyacrylonitrile based ink [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0241ecs
Vancouver
Vega-Manzano O, Perez Medina GJ, Furlan R, Silva ANR da, Rosa LG. Dip Pen nanolithography using a polyacrylonitrile based ink [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0241ecs
Trabalho de evento
Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy (2012)
Huanca, Danilo Roque ; Christiano, Veronica; Adelmann, Christoph; Kellerman, Guinther ; Verdonck, Patrick Bernard; Santos Filho, Sebastião Gomes dos
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
HUANCA, Danilo Roque et al. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0383ecst. Acesso em: 08 out. 2025.
APA
Huanca, D. R., Christiano, V., Adelmann, C., Kellerman, G., Verdonck, P. B., & Santos Filho, S. G. dos. (2012). Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0383ecst
NLM
Huanca DR, Christiano V, Adelmann C, Kellerman G, Verdonck PB, Santos Filho SG dos. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0383ecst
Vancouver
Huanca DR, Christiano V, Adelmann C, Kellerman G, Verdonck PB, Santos Filho SG dos. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0383ecst
Trabalho de evento
Simulation of a Miller OpAmp with FinFETs at High temperatures (2012)
Contreras, Esteban ; Cerdeira, Antonio ; Pavanello, Marcelo Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CONTRERAS, Esteban e CERDEIRA, Antonio e PAVANELLO, Marcelo Antonio. Simulation of a Miller OpAmp with FinFETs at High temperatures. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0177ecst. Acesso em: 08 out. 2025.
APA
Contreras, E., Cerdeira, A., & Pavanello, M. A. (2012). Simulation of a Miller OpAmp with FinFETs at High temperatures. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0177ecst
NLM
Contreras E, Cerdeira A, Pavanello MA. Simulation of a Miller OpAmp with FinFETs at High temperatures [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0177ecst
Vancouver
Contreras E, Cerdeira A, Pavanello MA. Simulation of a Miller OpAmp with FinFETs at High temperatures [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0177ecst
Trabalho de evento
MEMS-based ultrasound transducer: CMUT modeling and fabrication process (2012)
Oliveira, Victor Inacio de; Ibrahim, Ricardo Cury ; Barros, Ettore Apolônio de ; Mendonça, Lucas Gonçalves Dias; Lima, Bruno Luis Soares de ; Piazzeta, Maria Helena de Oliveira; Gobbi, Angelo Luiz
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, Victor Inacio de et al. MEMS-based ultrasound transducer: CMUT modeling and fabrication process. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0431ecst. Acesso em: 08 out. 2025.
APA
Oliveira, V. I. de, Ibrahim, R. C., Barros, E. A. de, Mendonça, L. G. D., Lima, B. L. S. de, Piazzeta, M. H. de O., & Gobbi, A. L. (2012). MEMS-based ultrasound transducer: CMUT modeling and fabrication process. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0431ecst
NLM
Oliveira VI de, Ibrahim RC, Barros EA de, Mendonça LGD, Lima BLS de, Piazzeta MH de O, Gobbi AL. MEMS-based ultrasound transducer: CMUT modeling and fabrication process [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0431ecst
Vancouver
Oliveira VI de, Ibrahim RC, Barros EA de, Mendonça LGD, Lima BLS de, Piazzeta MH de O, Gobbi AL. MEMS-based ultrasound transducer: CMUT modeling and fabrication process [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0431ecst
Trabalho de evento
Electrical transport mechanisms in mono-layer phthalocyanine device (2008)
Raimundo, Daniel Scodeler; Stelet, Adriana Barboza; Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAIMUNDO, Daniel Scodeler et al. Electrical transport mechanisms in mono-layer phthalocyanine device. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956078. Acesso em: 08 out. 2025.
APA
Raimundo, D. S., Stelet, A. B., Huanca, D. R., & Salcedo, W. J. (2008). Electrical transport mechanisms in mono-layer phthalocyanine device. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956078
NLM
Raimundo DS, Stelet AB, Huanca DR, Salcedo WJ. Electrical transport mechanisms in mono-layer phthalocyanine device [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/1.2956078
Vancouver
Raimundo DS, Stelet AB, Huanca DR, Salcedo WJ. Electrical transport mechanisms in mono-layer phthalocyanine device [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/1.2956078
Trabalho de evento
Thermal oxide passivation by corona charges (2008)
Ramos, Carlos Alberto Santos; Sanchez, Manuel Cid; Onmori, Roberto Koji ; Stem, Nair
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAMOS, Carlos Alberto Santos et al. Thermal oxide passivation by corona charges. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956071. Acesso em: 08 out. 2025.
APA
Ramos, C. A. S., Sanchez, M. C., Onmori, R. K., & Stem, N. (2008). Thermal oxide passivation by corona charges. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956071
NLM
Ramos CAS, Sanchez MC, Onmori RK, Stem N. Thermal oxide passivation by corona charges [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/1.2956071
Vancouver
Ramos CAS, Sanchez MC, Onmori RK, Stem N. Thermal oxide passivation by corona charges [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/1.2956071
Trabalho de evento
Diffractive optical elements based in brand glass (2008)
Sparvoli, Marina; Mansano, Ronaldo Domingues ; Chubaci, Jose Fernando Diniz
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SPARVOLI, Marina e MANSANO, Ronaldo Domingues e CHUBACI, Jose Fernando Diniz. Diffractive optical elements based in brand glass. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 08 out. 2025.
APA
Sparvoli, M., Mansano, R. D., & Chubaci, J. F. D. (2008). Diffractive optical elements based in brand glass. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Sparvoli M, Mansano RD, Chubaci JFD. Diffractive optical elements based in brand glass. SBMICRO 2008: Anais. 2008 ;[citado 2025 out. 08 ]
Vancouver
Sparvoli M, Mansano RD, Chubaci JFD. Diffractive optical elements based in brand glass. SBMICRO 2008: Anais. 2008 ;[citado 2025 out. 08 ]

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