Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes (2012)
- Authors:
- USP affiliated authors: PEREYRA, INÊS - EP ; ABÊ, IGOR YAMAMOTO - EP
- Unidade: EP
- DOI: 10.1149/04901.0255ecst
- Assunto: MICROELETRÔNICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 2012
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ABE, Igor Yamamoto e PEREYRA, Inés. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0255ecst. Acesso em: 28 dez. 2025. -
APA
Abe, I. Y., & Pereyra, I. (2012). Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0255ecst -
NLM
Abe IY, Pereyra I. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 dez. 28 ] Available from: https://doi.org/10.1149/04901.0255ecst -
Vancouver
Abe IY, Pereyra I. Fabrication of transparent conductive thin films based on multi-walled carbon nanotubes [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 dez. 28 ] Available from: https://doi.org/10.1149/04901.0255ecst - Síntese de nanotubos de carbono pela técnica de deposição química a vapor
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- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
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- Low temperature pecvd silicon oxide
- Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric
- Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
Informações sobre o DOI: 10.1149/04901.0255ecst (Fonte: oaDOI API)
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