Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric (2007)
- Authors:
- Autor USP: PEREYRA, INÊS - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; CIÊNCIA DA COMPUTAÇÃO
- Language: Inglês
- Imprenta:
- Publisher: Brazilian Microelectronics Society / Brazilian Computer Society
- Publisher place: São Paulo - Porto Alegre
- Date published: 2007
- Source:
- Título do periódico: Journal of Integrated Circuits and Systems
- ISSN: 1807-1953
- Volume/Número/Paginação/Ano: v.2, n. 2, September 2007
-
ABNT
ALBERTIN, Katia Franklin; VALLE, M A; PEREYRA, Inés. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems, São Paulo - Porto Alegre, Brazilian Microelectronics Society / Brazilian Computer Society, v. 2, n. 2, 2007. -
APA
Albertin, K. F., Valle, M. A., & Pereyra, I. (2007). Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems, 2( 2). -
NLM
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems. 2007 ;2( 2): -
Vancouver
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems. 2007 ;2( 2): - Silicon carbide clusters in silicon formed by carbon ions implantation
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