Low temperature pecvd silicon oxide (1995)
- Authors:
- Autor USP: ALVAREZ, INES PEREYRA DE - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
PEREYRA, Inés; ALAYO CHÁVEZ, Marco Isaías. Low temperature pecvd silicon oxide. Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. -
APA
Pereyra, I., & Alayo Chávez, M. I. (1995). Low temperature pecvd silicon oxide. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Pereyra I, Alayo Chávez MI. Low temperature pecvd silicon oxide. Proceedings. 1995 ; -
Vancouver
Pereyra I, Alayo Chávez MI. Low temperature pecvd silicon oxide. Proceedings. 1995 ; - Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
- Silicon carbide clusters in silicon formed by carbon ions implantation
- One mask step a-Si:H/a-SiOxNy thin film transistor
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Ligas de silício amorfo hidrogenado: obtenção, caracterização e aplicações
- Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
- Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures
- Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric
- Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer
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