Silicon carbide clusters in silicon formed by carbon ions implantation (2003)
- Authors:
- Autor USP: ALVAREZ, INES PEREYRA DE - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Electrochemical Society
- Publisher place: Pennington
- Date published: 2003
- ISBN: 1-56677-389-X
- Source:
- Título do periódico: Microelectronic Technology and Devices SBMicro 2003
-
ABNT
ESCOBAR FORHAN, Neisy Amparo; PEREYRA, Inés. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003[S.l: s.n.], 2003. -
APA
Escobar Forhan, N. A., & Pereyra, I. (2003). Silicon carbide clusters in silicon formed by carbon ions implantation. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. -
Vancouver
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. - One mask step a-Si:H/a-SiOxNy thin film transistor
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