Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures (1996)
- Authors:
- Autor USP: ALVAREZ, INES PEREYRA DE - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microeletronics Society
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ABNT
ALAYO CHÁVEZ, Marco Isaías e PEREYRA, Inés. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 05 out. 2024. -
APA
Alayo Chávez, M. I., & Pereyra, I. (1996). Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. In Proceedings. São Paulo: Sbmicro. -
NLM
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2024 out. 05 ] -
Vancouver
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2024 out. 05 ] - Silicon carbide clusters in silicon formed by carbon ions implantation
- One mask step a-Si:H/a-SiOxNy thin film transistor
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
- High quality low temperature DPECVD silicon dioxide
- Low temperature pecvd silicon oxide
- Ligas de silício amorfo hidrogenado: obtenção, caracterização e aplicações
- Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric
- Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
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