One mask step a-Si:H/a-SiOxNy thin film transistor (2004)
- Authors:
- USP affiliated author: PEREYRA, INÊS - EP
- School: EP
- Subjects: MICROELETRÔNICA; CAPACITORES; FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Place of publication: Pennington
- Date published: 2004
- ISBN: 1-56677-416-0
- Source:
- Título do periódico: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03
- Conference title: Symposium on Microelectronics Technology and Devices SBMICRO
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ABNT
ALBERTIN, Katia Franklin; PEREYRA, Inés. One mask step a-Si:H/a-SiOxNy thin film transistor. Anais.. Pennington: The Electrochemical Society, 2004. -
APA
Albertin, K. F., & Pereyra, I. (2004). One mask step a-Si:H/a-SiOxNy thin film transistor. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Albertin KF, Pereyra I. One mask step a-Si:H/a-SiOxNy thin film transistor. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ; -
Vancouver
Albertin KF, Pereyra I. One mask step a-Si:H/a-SiOxNy thin film transistor. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ; - Silicon carbide clusters in silicon formed by carbon ions implantation
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
- High quality low temperature DPECVD silicon dioxide
- Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
- Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric
- Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures
- Low temperature pecvd silicon oxide
- Ligas de silício amorfo hidrogenado: obtenção, caracterização e aplicações
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