One mask step a-Si:H/a-SiOxNy thin film transistor (2004)
- Authors:
- Autor USP: PEREYRA, INÊS - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; CAPACITORES; FILMES FINOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- ISBN: 1-56677-416-0
- Source:
- Conference titles: Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
ALBERTIN, Katia Franklin e PEREYRA, Inés. One mask step a-Si:H/a-SiOxNy thin film transistor. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 13 fev. 2026. -
APA
Albertin, K. F., & Pereyra, I. (2004). One mask step a-Si:H/a-SiOxNy thin film transistor. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Albertin KF, Pereyra I. One mask step a-Si:H/a-SiOxNy thin film transistor. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 fev. 13 ] -
Vancouver
Albertin KF, Pereyra I. One mask step a-Si:H/a-SiOxNy thin film transistor. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 fev. 13 ] - Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
- Ligas de silício amorfo hidrogenado: obtenção, caracterização e aplicações
- Study of MOS capacitors with annealed TiO2 gate dielectric layer
- Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric
- Low temperature pecvd silicon oxide
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures
- High quality low temperature DPECVD silicon dioxide
- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
