Photoluminescence in silicon-rich PECVD silicon oxynitride alloys (2008)
- Authors:
- Autor USP: PEREYRA, INES - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2008
- Source:
- Título: SBMICRO 2008: Anais
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
RIBEIRO, M e PEREYRA, Inés. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 13 fev. 2026. -
APA
Ribeiro, M., & Pereyra, I. (2008). Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. -
NLM
Ribeiro M, Pereyra I. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. SBMICRO 2008: Anais. 2008 ;[citado 2026 fev. 13 ] -
Vancouver
Ribeiro M, Pereyra I. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. SBMICRO 2008: Anais. 2008 ;[citado 2026 fev. 13 ] - Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
- Ligas de silício amorfo hidrogenado: obtenção, caracterização e aplicações
- One mask step a-Si:H/a-SiOxNy thin film transistor
- Study of MOS capacitors with annealed TiO2 gate dielectric layer
- Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric
- Low temperature pecvd silicon oxide
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures
- High quality low temperature DPECVD silicon dioxide
- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
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