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Artigo de periodico
Study of temperature and performance for LED devices with white emission (2019)
Santos, Emerson Roberto ; Fullenbach, Thiago de Carvalho; Duarte, Antonio Celso ; Marcos, Paulo Jorge Brasão; Sonnenberg, Victor ; Burini Junior, Elvo Calixto ; Onmori, Roberto Koji ; Hui,Wang Shu
Fonte: Revista Brasileira de Aplicação de Vacuo, Campinas, SP. Unidade: EP
Assuntos: ÁGUA CORRENTE, DIODOS
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ABNT
SANTOS, Emerson Roberto et al. Study of temperature and performance for LED devices with white emission. Revista Brasileira de Aplicação de Vacuo, Campinas, SP, v. 38, n. 2, p. 83-88, 2019Tradução . . Disponível em: https://doi.org/10.17563/rbav.v38i2.1129. Acesso em: 16 nov. 2024.
APA
Santos, E. R., Fullenbach, T. de C., Duarte, A. C., Marcos, P. J. B., Sonnenberg, V., Burini Junior, E. C., et al. (2019). Study of temperature and performance for LED devices with white emission. Revista Brasileira de Aplicação de Vacuo, Campinas, SP, 38( 2), 83-88. doi:10.17563/rbav.v38i2.1129
NLM
Santos ER, Fullenbach T de C, Duarte AC, Marcos PJB, Sonnenberg V, Burini Junior EC, Onmori RK, Hui WS. Study of temperature and performance for LED devices with white emission [Internet]. Revista Brasileira de Aplicação de Vacuo, Campinas, SP. 2019 ; 38( 2): 83-88.[citado 2024 nov. 16 ] Available from: https://doi.org/10.17563/rbav.v38i2.1129
Vancouver
Santos ER, Fullenbach T de C, Duarte AC, Marcos PJB, Sonnenberg V, Burini Junior EC, Onmori RK, Hui WS. Study of temperature and performance for LED devices with white emission [Internet]. Revista Brasileira de Aplicação de Vacuo, Campinas, SP. 2019 ; 38( 2): 83-88.[citado 2024 nov. 16 ] Available from: https://doi.org/10.17563/rbav.v38i2.1129
Artigo de periodico
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies (2017)
Itocazu, Vitor Tatsuo ; Sonnenberg, Victor ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ITOCAZU, Vitor Tatsuo et al. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 82-88, 2017Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.455. Acesso em: 16 nov. 2024.
APA
Itocazu, V. T., Sonnenberg, V., Martino, J. A., Simoen, E., & Claeys, C. (2017). Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, 12( 2), 82-88. doi:10.29292/jics.v12i2.455
NLM
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2024 nov. 16 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Vancouver
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2024 nov. 16 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Artigo de periodico
Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation (2016)
Itocazu, Vitor Tatsuo ; Martino, João Antonio ; Sasaki, Kátia Regina Akemi; Simoen, Eddy ; Claeys, Cor ; Sonnenberg, Victor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ITOCAZU, Vitor Tatsuo et al. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 101-106, 2016Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.458. Acesso em: 16 nov. 2024.
APA
Itocazu, V. T., Martino, J. A., Sasaki, K. R. A., Simoen, E., Claeys, C., & Sonnenberg, V. (2016). Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, 12( 2), 101-106. doi:10.29292/jics.v12i2.458
NLM
Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2024 nov. 16 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Vancouver
Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2024 nov. 16 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Trabalho de evento
Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs. (2012)
Itocazu, Vitor Tatsuo ; Sonnenberg, Victor ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Fonte: Microelectronics technology and devices, SBMicro. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ITOCAZU, Vitor Tatsuo et al. Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0511ecst. Acesso em: 16 nov. 2024.
APA
Itocazu, V. T., Sonnenberg, V., Simoen, E., Claeys, C., & Martino, J. A. (2012). Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0511ecst
NLM
Itocazu VT, Sonnenberg V, Simoen E, Claeys C, Martino JA. Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1149/04901.0511ecst
Vancouver
Itocazu VT, Sonnenberg V, Simoen E, Claeys C, Martino JA. Analysis of the silicon film thickness and the ground plane influence on ultra thin buried oxide SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1149/04901.0511ecst
Artigo de periodico
Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films (2010)
Christiano, Veronica; Gozzi, Giuliano ; Sonnenberg, Victor ; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
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ABNT
CHRISTIANO, Veronica et al. Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 333-340, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474177. Acesso em: 16 nov. 2024.
APA
Christiano, V., Gozzi, G., Sonnenberg, V., & Santos Filho, S. G. dos. (2010). Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 333-340. doi:10.1149/1.3474177
NLM
Christiano V, Gozzi G, Sonnenberg V, Santos Filho SG dos. Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 333-340.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1149/1.3474177
Vancouver
Christiano V, Gozzi G, Sonnenberg V, Santos Filho SG dos. Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 333-340.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1149/1.3474177
Trabalho de evento
Corner effect on capacitance-voltage curves in triple gate FinFET (2008)
Rodrigues, Michele; Sonnenberg, Victor ; Martino, João Antonio
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Corner effect on capacitance-voltage curves in triple gate FinFET. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 16 nov. 2024.
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2008). Corner effect on capacitance-voltage curves in triple gate FinFET. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Rodrigues M, Sonnenberg V, Martino JA. Corner effect on capacitance-voltage curves in triple gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 16 ]
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Corner effect on capacitance-voltage curves in triple gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 16 ]
Trabalho de evento
Triple gate finFET parameter extraction using high frequency capacitance - voltage curves (2007)
Rodrigues, Michele; Sonnenberg, Victor ; Martino, João Antonio
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 16 nov. 2024.
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2007). Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Rodrigues M, Sonnenberg V, Martino JA. Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. SBMicro 2007. 2007 ;[citado 2024 nov. 16 ]
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Triple gate finFET parameter extraction using high frequency capacitance - voltage curves. SBMicro 2007. 2007 ;[citado 2024 nov. 16 ]
Trabalho de evento
Simple method to determine the poly gate doping concentration based on poly depletion effect (2005)
Rodrigues, Michele; Sonnenberg, Victor ; Martino, João Antonio
Fonte: Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Simple method to determine the poly gate doping concentration based on poly depletion effect. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2024.
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2005). Simple method to determine the poly gate doping concentration based on poly depletion effect. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 16 ]
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 16 ]
Artigo de periodico
SOI technology characterization using SOI-MOS capacitor (2005)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2004.06.010. Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2005). SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics. doi:10.1016/j.sse.2004.06.010
NLM
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010
Vancouver
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010
Parte de monografia/livro
Analysis of the capacitance vs. voltage in graded channel SOI capacitor (2003)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2003). Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 16 ]
Relatorio tecnico
New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Unidade: EP
Assunto: FILMES FINOS
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. . São Paulo: EPUSP. . Acesso em: 16 nov. 2024. , 2002
APA
Sonnenberg, V., & Martino, J. A. (2002). New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. São Paulo: EPUSP.
NLM
Sonnenberg V, Martino JA. New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2002 ;[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2002 ;[citado 2024 nov. 16 ]
Parte de monografia/livro
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2002). Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 nov. 16 ]
Artigo de periodico
Physical and electrical characterization of thin nickel films obtained from electroless plating onto aluminum (2001)
Marques, Angelo Eduardo Battistini; Santos Filho, Sebastião Gomes dos ; Navia, Alan Rodrigo; Sonnenberg, Victor ; Martino, João Antonio
Fonte: Physica Status Solidi. Unidade: EP
Assunto: FILMES FINOS (CARACTERÍSTICAS)
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ABNT
MARQUES, Angelo Eduardo Battistini et al. Physical and electrical characterization of thin nickel films obtained from electroless plating onto aluminum. Physica Status Solidi, v. 187, n. 1, p. 75-84, 2001Tradução . . Disponível em: https://doi.org/10.1002/1521-396x(200109)187:1<75::aid-pssa75>3.0.co;2-q. Acesso em: 16 nov. 2024.
APA
Marques, A. E. B., Santos Filho, S. G. dos, Navia, A. R., Sonnenberg, V., & Martino, J. A. (2001). Physical and electrical characterization of thin nickel films obtained from electroless plating onto aluminum. Physica Status Solidi, 187( 1), 75-84. doi:10.1002/1521-396x(200109)187:1<75::aid-pssa75>3.0.co;2-q
NLM
Marques AEB, Santos Filho SG dos, Navia AR, Sonnenberg V, Martino JA. Physical and electrical characterization of thin nickel films obtained from electroless plating onto aluminum [Internet]. Physica Status Solidi. 2001 ; 187( 1): 75-84.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1002/1521-396x(200109)187:1<75::aid-pssa75>3.0.co;2-q
Vancouver
Marques AEB, Santos Filho SG dos, Navia AR, Sonnenberg V, Martino JA. Physical and electrical characterization of thin nickel films obtained from electroless plating onto aluminum [Internet]. Physica Status Solidi. 2001 ; 187( 1): 75-84.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1002/1521-396x(200109)187:1<75::aid-pssa75>3.0.co;2-q
Trabalho de evento
New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor (2001)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: SBMicro 2001: proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2001). New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. In SBMicro 2001: proceedings. Brasília: SBMicro.
NLM
Sonnenberg V, Martino JA. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. SBMicro 2001: proceedings. 2001 ;[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. SBMicro 2001: proceedings. 2001 ;[citado 2024 nov. 16 ]
Trabalho de evento
Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor (2001)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Proceedings. Nome do evento: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. 2001, Anais.. Pennington: The Electrochemical Society, 2001. . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2001). Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. In Proceedings. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Proceedings. 2001 ;[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Proceedings. 2001 ;[citado 2024 nov. 16 ]
Trabalho de evento
Electrical characterization of thin nickel films obtained from electroless plating onto aluminum gate of MOS capacitors (2000)
Navia, Alan Rodrigo; Sonnenberg, Victor ; Marques, Angelo Eduardo Battistini; Santos Filho, Sebastião Gomes dos ; Martino, João Antonio
Fonte: SBMicro 2000 : proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NAVIA, Alan Rodrigo et al. Electrical characterization of thin nickel films obtained from electroless plating onto aluminum gate of MOS capacitors. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2024.
APA
Navia, A. R., Sonnenberg, V., Marques, A. E. B., Santos Filho, S. G. dos, & Martino, J. A. (2000). Electrical characterization of thin nickel films obtained from electroless plating onto aluminum gate of MOS capacitors. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Navia AR, Sonnenberg V, Marques AEB, Santos Filho SG dos, Martino JA. Electrical characterization of thin nickel films obtained from electroless plating onto aluminum gate of MOS capacitors. SBMicro 2000 : proceedings. 2000 ;[citado 2024 nov. 16 ]
Vancouver
Navia AR, Sonnenberg V, Marques AEB, Santos Filho SG dos, Martino JA. Electrical characterization of thin nickel films obtained from electroless plating onto aluminum gate of MOS capacitors. SBMicro 2000 : proceedings. 2000 ;[citado 2024 nov. 16 ]
Trabalho de evento
Determination of oxide charge density at the gate oxide/silicon film interface in SOI-MOS capacitor (2000)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: SBMicro 2000: proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of oxide charge density at the gate oxide/silicon film interface in SOI-MOS capacitor. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2000). Determination of oxide charge density at the gate oxide/silicon film interface in SOI-MOS capacitor. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Sonnenberg V, Martino JA. Determination of oxide charge density at the gate oxide/silicon film interface in SOI-MOS capacitor. SBMicro 2000: proceedings. 2000 ;[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Determination of oxide charge density at the gate oxide/silicon film interface in SOI-MOS capacitor. SBMicro 2000: proceedings. 2000 ;[citado 2024 nov. 16 ]
Trabalho de evento
Determination of silicon film thickness in SOI capacitors (2000)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: LATW 00: proceedings. Nome do evento: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of silicon film thickness in SOI capacitors. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2000). Determination of silicon film thickness in SOI capacitors. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Sonnenberg V, Martino JA. Determination of silicon film thickness in SOI capacitors. LATW 00: proceedings. 2000 ;[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Determination of silicon film thickness in SOI capacitors. LATW 00: proceedings. 2000 ;[citado 2024 nov. 16 ]
Trabalho de evento-anais periodico
A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor (1999)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Electrochemical Society. Proceedings. Nome do evento: Silicon on Insulation Technology and Devices. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 16 nov. 2024. , 1999
APA
Sonnenberg, V., & Martino, J. A. (1999). A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo.
NLM
Sonnenberg V, Martino JA. A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. 1999 ; 99-3 189-194.[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. A simple method to extract the oxide charge density at the buried oxide/substrate interface in SOI capacitor. Electrochemical Society. Proceedings. 1999 ; 99-3 189-194.[citado 2024 nov. 16 ]
Trabalho de evento
Determination of silican film thickness by SOI-MOS capacitor without the influence of accumulation layer (1999)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: ICMP 99 : Technical Digest. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: ENGENHARIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of silican film thickness by SOI-MOS capacitor without the influence of accumulation layer. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 16 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (1999). Determination of silican film thickness by SOI-MOS capacitor without the influence of accumulation layer. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS.
NLM
Sonnenberg V, Martino JA. Determination of silican film thickness by SOI-MOS capacitor without the influence of accumulation layer. ICMP 99 : Technical Digest. 1999 ;[citado 2024 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Determination of silican film thickness by SOI-MOS capacitor without the influence of accumulation layer. ICMP 99 : Technical Digest. 1999 ;[citado 2024 nov. 16 ]

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