Simple method to determine the poly gate doping concentration based on poly depletion effect (2005)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2005
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Simple method to determine the poly gate doping concentration based on poly depletion effect. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 20 jan. 2026. -
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2005). Simple method to determine the poly gate doping concentration based on poly depletion effect. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society. -
NLM
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2026 jan. 20 ] -
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2026 jan. 20 ] - Analog performance and application of graded-channel fully depleted SOI MOSFETs
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