Simple method to determine the poly gate doping concentration based on poly depletion effect (2005)
- Autores:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Editora: The Electrochemical Society
- Local: Pennington
- Data de publicação: 2005
- Fonte:
- Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Simple method to determine the poly gate doping concentration based on poly depletion effect. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2024. -
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2005). Simple method to determine the poly gate doping concentration based on poly depletion effect. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society. -
NLM
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 16 ] -
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 16 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
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