Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor (2001)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2001
- Source:
- Título do periódico: Proceedings
- Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices
-
ABNT
SONNENBERG, Victor; MARTINO, João Antonio. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Anais.. Pennington: The Electrochemical Society, 2001. -
APA
Sonnenberg, V., & Martino, J. A. (2001). Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. In Proceedings. Pennington: The Electrochemical Society. -
NLM
Sonnenberg V, Martino JA. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Proceedings. 2001 ; -
Vancouver
Sonnenberg V, Martino JA. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Proceedings. 2001 ; - Transistor soi-nmosfet nao auto-alinhado
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets
- Modelagem do substrato e novos métodos de caracterização elétrica de SOI MOSFET
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
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