Analysis of the capacitance vs. voltage in graded channel SOI capacitor (2003)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Electrochemical Society
- Publisher place: Pennington
- Date published: 2003
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2003
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 11 nov. 2025. -
APA
Sonnenberg, V., & Martino, J. A. (2003). Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 11 ] -
Vancouver
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 11 ] - Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
- A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
- Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
- A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature
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