Analysis of the capacitance vs. voltage in graded channel SOI capacitor (2003)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Electrochemical Society
- Publisher place: Pennington
- Date published: 2003
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2003
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 23 fev. 2026. -
APA
Sonnenberg, V., & Martino, J. A. (2003). Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 fev. 23 ] -
Vancouver
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 fev. 23 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
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