Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation

Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation (2016)

Authors:
USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; SONNENBERG, VICTOR - EP ; ITOCAZU, VITOR TATSUO - EP ; SASAKI, KATIA REGINA AKEMI - EP
Unidade: EP
DOI: 10.29292/jics.v12i2.458
Assunto: SEMICONDUTORES
Language: Inglês
Source:
- Título: Journal of Integrated Circuits and Systems
- Volume/Número/Paginação/Ano: v. 12, n. 2, p.101-106, Aug 2016

Informações sobre o DOI: 10.29292/jics.v12i2.458 (Fonte: oaDOI API)

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ABNT

ITOCAZU, Vitor Tatsuo et al. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 101-106, 2016Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.458. Acesso em: 31 dez. 2025.
APA

Itocazu, V. T., Martino, J. A., Sasaki, K. R. A., Simoen, E., Claeys, C., & Sonnenberg, V. (2016). Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, 12( 2), 101-106. doi:10.29292/jics.v12i2.458
NLM

Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2025 dez. 31 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Vancouver

Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2025 dez. 31 ] Available from: https://doi.org/10.29292/jics.v12i2.458