Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell (2013)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP ; SASAKI, KATIA REGINA AKEMI - EP ; NISSIMOFF, ALBERT - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut Superieur d'Électronique
- Publisher place: Paris
- Date published: 2013
- Source:
- Título: EUROSOI 2013
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio et al. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 30 dez. 2025. -
APA
Martino, J. A., Sasaki, K. R. A., Nissimoff, A., Almeida, L. M., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2025 dez. 30 ] -
Vancouver
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2025 dez. 30 ] - Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
- Enhanced dynamic threshold voltage UTBB SOI nMOSFETs
- Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
- Impact of the extension region concentration on the UTBOX IT-FBRAM
- Propostas de melhorias de desempenho de célula de memória dinâmica utilizando um único transistor UTBOX SOI
- Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices
- Estudo dinâmico de memórias 1T-DRAM
- Estudo de transistores SOI MOSFETs com camada de silício e óxido enterrado ultrafinos operando em modo de tensão de limiar dinâmica
- An enzymatic glucose biosensor using the BESOI MOSFET
- Study of ISFET for KCl sensing
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