Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell (2013)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP ; SASAKI, KATIA REGINA AKEMI - EP ; NISSIMOFF, ALBERT - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut Superieur d'Électronique
- Publisher place: Paris
- Date published: 2013
- Source:
- Título: EUROSOI 2013
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio et al. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 08 abr. 2026. -
APA
Martino, J. A., Sasaki, K. R. A., Nissimoff, A., Almeida, L. M., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2026 abr. 08 ] -
Vancouver
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2026 abr. 08 ] - Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
- Enhanced dynamic threshold voltage UTBB SOI nMOSFETs
- Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
- Impact of the extension region concentration on the UTBOX IT-FBRAM
- Estudo dinâmico de memórias 1T-DRAM
- Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices
- Estudo de transistores SOI MOSFETs com camada de silício e óxido enterrado ultrafinos operando em modo de tensão de limiar dinâmica
- Propostas de melhorias de desempenho de célula de memória dinâmica utilizando um único transistor UTBOX SOI
- Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation
- Study of ISFET for KCl sensing
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