Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices (2013)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Sigla do Departamento: PSI
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut Superieur d'Électronique
- Publisher place: Paris
- Date published: 2013
- Source:
- Título do periódico: EUROSOI 2013
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio; NICOLETTI, Talitha; SASAKI, Katia Regina Akemi; et al. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. Anais.. Paris: Institut Superieur d'Électronique, 2013. -
APA
Martino, J. A., Nicoletti, T., Sasaki, K. R. A., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Nicoletti T, Sasaki KRA, Aoulaiche M, Simoen E, Claeys C. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. EUROSOI 2013. 2013 ; -
Vancouver
Martino JA, Nicoletti T, Sasaki KRA, Aoulaiche M, Simoen E, Claeys C. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. EUROSOI 2013. 2013 ; - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
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