Determination of silicon film thickness in SOI capacitors (2000)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: IEEE/SBC
- Publisher place: Piscataway
- Date published: 2000
- Source:
- Título do periódico: LATW 00: proceedings
- Conference titles: IEEE Latin American Test Workshop
-
ABNT
SONNENBERG, Victor; MARTINO, João Antonio. Determination of silicon film thickness in SOI capacitors. Anais.. Piscataway: IEEE/SBC, 2000. -
APA
Sonnenberg, V., & Martino, J. A. (2000). Determination of silicon film thickness in SOI capacitors. In LATW 00: proceedings. Piscataway: IEEE/SBC. -
NLM
Sonnenberg V, Martino JA. Determination of silicon film thickness in SOI capacitors. LATW 00: proceedings. 2000 ; -
Vancouver
Sonnenberg V, Martino JA. Determination of silicon film thickness in SOI capacitors. LATW 00: proceedings. 2000 ; - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- A physically-based continuous model for graded-channel SOI MOSFET
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
