New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor (2001)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: SBMicro 2001: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 23 jan. 2026. -
APA
Sonnenberg, V., & Martino, J. A. (2001). New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Sonnenberg V, Martino JA. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 23 ] -
Vancouver
Sonnenberg V, Martino JA. New method for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 23 ] - Analog circuit design using graded-channel SOI NMOSFETs
- Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures
- Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs
- Projeto de um processo CMOS com cavidade dupla e dimensões de porta de 2 um
- Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time
- Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
- Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results
- Estudo comparativo de estruturas de fonte e dreno de transistores mos submicrometricos
- Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices
- Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs
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