Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices (2012)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- DOI: 10.1109/ULIS.2012.6193357
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway
- Date published: 2012
- Source:
- Título do periódico: Proceedings of the conference
- Conference titles: International Conference on Ultimate Integration on Silicon
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ALMEIDA, Luciano Mendes et al. Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices. 2012, Anais.. Piscataway: IEEE, 2012. Disponível em: https://doi.org/10.1109/ULIS.2012.6193357. Acesso em: 27 set. 2024. -
APA
Almeida, L. M., Martino, J. A., Aoulaiche, M., Sasaki, K. R. A., Nicoletti, T., Collaert, N., et al. (2012). Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices. In Proceedings of the conference. Piscataway: IEEE. doi:10.1109/ULIS.2012.6193357 -
NLM
Almeida LM, Martino JA, Aoulaiche M, Sasaki KRA, Nicoletti T, Collaert N, Simoen E, Claeys C, Jurczak MJ. Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices [Internet]. Proceedings of the conference. 2012 ;[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ULIS.2012.6193357 -
Vancouver
Almeida LM, Martino JA, Aoulaiche M, Sasaki KRA, Nicoletti T, Collaert N, Simoen E, Claeys C, Jurczak MJ. Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices [Internet]. Proceedings of the conference. 2012 ;[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ULIS.2012.6193357 - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Informações sobre o DOI: 10.1109/ULIS.2012.6193357 (Fonte: oaDOI API)
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