Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures (1999)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/IMAPS
- Publisher place: São Paulo
- Date published: 1999
- Source:
- Título: ICMP 99 : Technical Digest
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 23 jan. 2026. -
APA
Pavanello, M. A., & Martino, J. A. (1999). Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS. -
NLM
Pavanello MA, Martino JA. Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 23 ] -
Vancouver
Pavanello MA, Martino JA. Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 23 ] - Analog circuit design using graded-channel SOI NMOSFETs
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