Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs (1996)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; ELETROQUÍMICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 1996
- Source:
- Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices
-
ABNT
SIMOEN, Eddy et al. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Tradução . Pennington: The Electrochemical Society, 1996. . . Acesso em: 23 jan. 2026. -
APA
Simoen, E., Claeys, C., Lukyanchikova, N., Petrichuk, M., Garbar, N., Martino, J. A., & Sonnenberg, V. (1996). Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society. -
NLM
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2026 jan. 23 ] -
Vancouver
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2026 jan. 23 ] - Analog circuit design using graded-channel SOI NMOSFETs
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