Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results (2014)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- DOI: 10.29292/jics.v9i2.393
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Source:
- Título do periódico: Journal of Integrated Circuits and Systems
- Volume/Número/Paginação/Ano: v. 9, n. 2, p. 91-96, Jan 2014
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
-
ABNT
NISSIMOFF, Albert et al. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 91-96, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.393. Acesso em: 19 abr. 2024. -
APA
Nissimoff, A., Claeys, C., Aoulaiche, M., Sasaki, K. L. M., Simoen, E., & Martino, J. A. (2014). Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, 9( 2), 91-96. doi:10.29292/jics.v9i2.393 -
NLM
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 abr. 19 ] Available from: https://doi.org/10.29292/jics.v9i2.393 -
Vancouver
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 abr. 19 ] Available from: https://doi.org/10.29292/jics.v9i2.393 - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Informações sobre o DOI: 10.29292/jics.v9i2.393 (Fonte: oaDOI API)
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