Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs (1996)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; ELETROQUÍMICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 1996
- Source:
- Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices
-
ABNT
SIMOEN, Eddy et al. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Tradução . Pennington: The Electrochemical Society, 1996. . . Acesso em: 23 abr. 2024. -
APA
Simoen, E., Claeys, C., Lukyanchikova, N., Petrichuk, M., Garbar, N., Martino, J. A., & Sonnenberg, V. (1996). Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society. -
NLM
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2024 abr. 23 ] -
Vancouver
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2024 abr. 23 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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