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Trabalho de evento-anais periodico
In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat (2007)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Marques, E B
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, EPITAXIA POR FEIXE MOLECULAR
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ABNT
MARTINI, S et al. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal. Acesso em: 10 ago. 2024. , 2007
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Marques, E. B. (2007). In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
NLM
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 ago. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Vancouver
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 ago. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Artigo de periodico
Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant (2005)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Thin Solid Films. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATERIAIS, EFEITO HALL, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS
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LAMAS, T. E. et al. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1-2, p. 25-30, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2004.08.004. Acesso em: 10 ago. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2005). Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, 474( 1-2), 25-30. doi:10.1016/j.tsf.2004.08.004
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Artigo de periodico
Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates (2005)
Martini, S; Quivy, A. A.; Lamas, T E; Silva, E C F da
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS, ESTRUTURA ELETRÔNICA
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ABNT
MARTINI, S et al. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, v. 72, n. 15, p. 153304/01-153304/04, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.72.153304. Acesso em: 10 ago. 2024.
APA
Martini, S., Quivy, A. A., Lamas, T. E., & Silva, E. C. F. da. (2005). Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, 72( 15), 153304/01-153304/04. doi:10.1103/physrevb.72.153304
NLM
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Vancouver
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Trabalho de evento-resumo
Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots (2005)
Pagnossin, I R; Silva, E C F da; Quivy, A. A.; Martini, S; Sergio, C. S
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS, EPITAXIA POR FEIXE MOLECULAR
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ABNT
PAGNOSSIN, I R et al. Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots. 2005, Anais.. São Paulo: Sociedade Brasileira de Física, 2005. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0945-1.pdf. Acesso em: 10 ago. 2024.
APA
Pagnossin, I. R., Silva, E. C. F. da, Quivy, A. A., Martini, S., & Sergio, C. S. (2005). Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots. In Resumos. São Paulo: Sociedade Brasileira de Física. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0945-1.pdf
NLM
Pagnossin IR, Silva ECF da, Quivy AA, Martini S, Sergio CS. Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots [Internet]. Resumos. 2005 ;[citado 2024 ago. 10 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0945-1.pdf
Vancouver
Pagnossin IR, Silva ECF da, Quivy AA, Martini S, Sergio CS. Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots [Internet]. Resumos. 2005 ;[citado 2024 ago. 10 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxviii/sys/resumos/R0945-1.pdf
Artigo de periodico
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region (2005)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2004.12.118. Acesso em: 10 ago. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2005). Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, 278, 103-107. doi:10.1016/j.jcrysgro.2004.12.118
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Trabalho de evento-resumo
The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells (2004)
Pagnossin, I. R; Silva, Emílio Carlos Nelli ; Quivy, A. A.; Martini, S; Sergio, C. S; Leite, J. R.
Source: Resumos. Conference titles: Encontro Nacional de Fisica da Matéria Condensada. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
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ABNT
PAGNOSSIN, I. R et al. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells. 2004, Anais.. São Paulo: SBF, 2004. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf. Acesso em: 10 ago. 2024.
APA
Pagnossin, I. R., Silva, E. C. N., Quivy, A. A., Martini, S., Sergio, C. S., & Leite, J. R. (2004). The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf
NLM
Pagnossin IR, Silva ECN, Quivy AA, Martini S, Sergio CS, Leite JR. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells [Internet]. Resumos. 2004 ;[citado 2024 ago. 10 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf
Vancouver
Pagnossin IR, Silva ECN, Quivy AA, Martini S, Sergio CS, Leite JR. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells [Internet]. Resumos. 2004 ;[citado 2024 ago. 10 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf
Artigo de periodico
InAs/GaAs quantum dots optically active at 1.5 'mu' (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T E; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA DOS MATERIAIS, FILMES FINOS
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ABNT
SILVA, M J da et al. InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, v. 82, n. 16, p. 2646-2648, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1569053. Acesso em: 10 ago. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, 82( 16), 2646-2648. doi:10.1063/1.1569053
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1569053
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1569053
Artigo de periodico
Morphological and optical properties of p-type GaAs(001) layers doped with silicon (2003)
Lamas, T. E.; Martini, S; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
LAMAS, T. E. et al. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5-8, p. 701-703, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00106-x. Acesso em: 10 ago. 2024.
APA
Lamas, T. E., Martini, S., Silva, M. J. da, Quivy, A. A., & Leite, J. R. (2003). Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, 34( 5-8), 701-703. doi:10.1016/s0026-2692(03)00106-x
NLM
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Vancouver
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Artigo de periodico
Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells (2003)
Cavalheiro, A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Takahashi, E K; Martini, S; Silva, M J da; Meneses, E A; Leite, J. R.
Source: Journal of Physics: Condensed Matter. Unidade: IF
Assunto: SUPERCONDUTIVIDADE
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ABNT
CAVALHEIRO, A et al. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, v. 15, n. 2, p. 121-132, 2003Tradução . . Disponível em: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf. Acesso em: 10 ago. 2024.
APA
Cavalheiro, A., Silva, E. C. F. da, Quivy, A. A., Takahashi, E. K., Martini, S., Silva, M. J. da, et al. (2003). Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells. Journal of Physics: Condensed Matter, 15( 2), 121-132. Recuperado de http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
NLM
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 ago. 10 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Vancouver
Cavalheiro A, Silva ECF da, Quivy AA, Takahashi EK, Martini S, Silva MJ da, Meneses EA, Leite JR. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells [Internet]. Journal of Physics: Condensed Matter. 2003 ; 15( 2): 121-132.[citado 2024 ago. 10 ] Available from: http://ej.iop.org/links/q87/UGqnwPFy6IAHtfZURvYaBg/c30212.pdf
Artigo de periodico
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 10 ago. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Trabalho de evento-resumo
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces (2003)
Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, M. J. da; Silva, Euzi Conceicao Fernandes da
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
QUIVY, A. A. et al. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 10 ago. 2024.
APA
Quivy, A. A., Martini, S., Lamas, T. E., Silva, M. J. da, & Silva, E. C. F. da. (2003). Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2024 ago. 10 ]
Vancouver
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2024 ago. 10 ]
Trabalho de evento-resumo
Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 10 ago. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 ago. 10 ]
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 ago. 10 ]
Trabalho de evento-resumo
Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy (2003)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
LAMAS, T. E. et al. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 10 ago. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2003). Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2024 ago. 10 ]
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2024 ago. 10 ]
Artigo de periodico
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
Duarte, C A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Silva, M J da; Martini, S; Leite, J. R.; Meneses, E A; Lauretto, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X, ÓPTICA, FOTOLUMINESCÊNCIA
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ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 10 ago. 2024.
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1568538
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1568538
Artigo de periodico
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction (2003)
Martini, S; Quivy, A. A.; Silva, M J da; Lamas, T E; Silva, E C F da; Leite, J. R.; Abramof, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1621738. Acesso em: 10 ago. 2024.
APA
Martini, S., Quivy, A. A., Silva, M. J. da, Lamas, T. E., Silva, E. C. F. da, Leite, J. R., & Abramof, E. (2003). Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics. doi:10.1063/1.1621738
NLM
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1621738
Vancouver
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1621738
Artigo de periodico
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface (2003)
Martini, S; Quivy, A. A.; Lamas, T. E.; Silva, M J da; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, n. 1-4, p. 101-105, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02313-8. Acesso em: 10 ago. 2024.
APA
Martini, S., Quivy, A. A., Lamas, T. E., Silva, M. J. da, Silva, E. C. F. da, & Leite, J. R. (2003). Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, 251( 1-4), 101-105. doi:10.1016/s0022-0248(02)02313-8
NLM
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8
Vancouver
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8
Artigo de periodico
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERCOMPUTADORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, v. 251, n. 1-4, p. 181-185, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 10 ago. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, 251( 1-4), 181-185. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2024 ago. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2024 ago. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Artigo de periodico
Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates (2002)
Sales, F V de; Soler, M A G; Ugarte, D; Abramof, E; Quivy, A. A.; Silva, S W da; Martini, S; Moraes, P C; Leite, J. R.
Source: Physica B. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALES, F V de et al. Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates. Physica B, v. 311, n. 3-4, p. 285-291, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b. Acesso em: 10 ago. 2024.
APA
Sales, F. V. de, Soler, M. A. G., Ugarte, D., Abramof, E., Quivy, A. A., Silva, S. W. da, et al. (2002). Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates. Physica B, 311( 3-4), 285-291. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b
NLM
Sales FV de, Soler MAG, Ugarte D, Abramof E, Quivy AA, Silva SW da, Martini S, Moraes PC, Leite JR. Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates [Internet]. Physica B. 2002 ; 311( 3-4): 285-291.[citado 2024 ago. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b
Vancouver
Sales FV de, Soler MAG, Ugarte D, Abramof E, Quivy AA, Silva SW da, Martini S, Moraes PC, Leite JR. Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates [Internet]. Physica B. 2002 ; 311( 3-4): 285-291.[citado 2024 ago. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b
Artigo de periodico
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 10 ago. 2024.
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1513182
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.1513182

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