The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells (2004)
- Authors:
- USP affiliated authors: SILVA, EMILIO CARLOS NELLI - EP ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidades: EP; IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Matéria Condensada
-
ABNT
PAGNOSSIN, I. R et al. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells. 2004, Anais.. São Paulo: SBF, 2004. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf. Acesso em: 20 abr. 2024. -
APA
Pagnossin, I. R., Silva, E. C. N., Quivy, A. A., Martini, S., Sergio, C. S., & Leite, J. R. (2004). The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf -
NLM
Pagnossin IR, Silva ECN, Quivy AA, Martini S, Sergio CS, Leite JR. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells [Internet]. Resumos. 2004 ;[citado 2024 abr. 20 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf -
Vancouver
Pagnossin IR, Silva ECN, Quivy AA, Martini S, Sergio CS, Leite JR. The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells [Internet]. Resumos. 2004 ;[citado 2024 abr. 20 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1061-1.pdf - Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
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