Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SUPERCOMPUTADORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 251, n. 1-4, p. 181-185, 2003
-
ABNT
SILVA, M J da et al. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, v. 251, n. 1-4, p. 181-185, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 12 mar. 2026. -
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, 251( 1-4), 181-185. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20 -
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2026 mar. 12 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20 -
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2026 mar. 12 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20 - The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
1-s2.0-S0022024802024053-... |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
