'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates (1997)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27/A, n. 4, p. 125-129, 1997
-
ABNT
QUIVY, Alain André et al. 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates. Brazilian Journal of Physics, v. 27/A, n. 4, p. 125-129, 1997Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdf. Acesso em: 15 mar. 2026. -
APA
Quivy, A. A., Frizzarini, M., Silva, E. C. F. da, Sperândio, A. L., & Leite, J. R. (1997). 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates. Brazilian Journal of Physics, 27/A( 4), 125-129. Recuperado de https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdf -
NLM
Quivy AA, Frizzarini M, Silva ECF da, Sperândio AL, Leite JR. 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates [Internet]. Brazilian Journal of Physics. 1997 ; 27/A( 4): 125-129.[citado 2026 mar. 15 ] Available from: https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdf -
Vancouver
Quivy AA, Frizzarini M, Silva ECF da, Sperândio AL, Leite JR. 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates [Internet]. Brazilian Journal of Physics. 1997 ; 27/A( 4): 125-129.[citado 2026 mar. 15 ] Available from: https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdf - The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
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