Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1513182
- Subjects: SEMICONDUTORES; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 81, n. 15, p. 2863-2865, 2002
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 25 jan. 2026. -
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182 -
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1063/1.1513182 -
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1063/1.1513182 - Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
Informações sobre o DOI: 10.1063/1.1513182 (Fonte: oaDOI API)
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