Large InAs/GaAs quantum dots with an optical response in the long-wavelength region (2005)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/j.jcrysgro.2004.12.118
- Subjects: POÇOS QUÂNTICOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 278, p. 103-107, 2005
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2004.12.118. Acesso em: 02 out. 2024. -
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2005). Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, 278, 103-107. doi:10.1016/j.jcrysgro.2004.12.118 -
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 out. 02 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118 -
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 out. 02 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118 - Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
- Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- H-band emission in single heterojunctions
Informações sobre o DOI: 10.1016/j.jcrysgro.2004.12.118 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
