Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- School: IF
- Subjects: SEMICONDUTORES; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Place of publication: Amsterdam
- Date published: 2003
- Source:
- Título do periódico: Book of Abstracts
- Conference title: International Conference on Defects in Semiconductors
-
ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 03 jul. 2022. -
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science. -
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2022 jul. 03 ] -
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2022 jul. 03 ] - Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- H-band emission in single heterojunctions
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
- Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
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