Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1621738
- Subjects: ESTRUTURA ELETRÔNICA; DIFRAÇÃO POR RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MARTINI, S et al. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1621738. Acesso em: 09 jan. 2026. -
APA
Martini, S., Quivy, A. A., Silva, M. J. da, Lamas, T. E., Silva, E. C. F. da, Leite, J. R., & Abramof, E. (2003). Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics. doi:10.1063/1.1621738 -
NLM
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2026 jan. 09 ] Available from: https://doi.org/10.1063/1.1621738 -
Vancouver
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2026 jan. 09 ] Available from: https://doi.org/10.1063/1.1621738 - Crescimento e caracterizacao optica de heteroestrutura de 'AL IND.X'ga ind.1-x''as' / 'ga''as' E 'in ind.Y''ga ind.1-y''as' / 'ga''as'
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
- Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
Informações sobre o DOI: 10.1063/1.1621738 (Fonte: oaDOI API)
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