Growth of selg-organized InGaAs islands by molecular beam epitaxy (1998)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1998
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v. 27, n. 4, p. 154-457, 1998
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
QUIVY, Alain André e COTTA, M A e LEITE, J. R. Growth of selg-organized InGaAs islands by molecular beam epitaxy. Brazilian Journal of Physics. São Paulo: Sociedade Brasileira de Física. . Acesso em: 17 fev. 2026. , 1998 -
APA
Quivy, A. A., Cotta, M. A., & Leite, J. R. (1998). Growth of selg-organized InGaAs islands by molecular beam epitaxy. Brazilian Journal of Physics. São Paulo: Sociedade Brasileira de Física. -
NLM
Quivy AA, Cotta MA, Leite JR. Growth of selg-organized InGaAs islands by molecular beam epitaxy. Brazilian Journal of Physics. 1998 ; 27( 4): 154-457.[citado 2026 fev. 17 ] -
Vancouver
Quivy AA, Cotta MA, Leite JR. Growth of selg-organized InGaAs islands by molecular beam epitaxy. Brazilian Journal of Physics. 1998 ; 27( 4): 154-457.[citado 2026 fev. 17 ] - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
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