Optically determined carrier transport in InGaAs-GaAs quantum wells (2000)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- School: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference title: Encontro Nacional de Física da Matéria Condensada
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ABNT
MONTE, Adamo Ferreira Gomes do; SILVA, Sebastiao Willian da; MORAIS, Paulo Cesar de; et al. Optically determined carrier transport in InGaAs-GaAs quantum wells. Anais.. São Paulo: SBF, 2000. -
APA
Monte, A. F. G. do, Silva, S. W. da, Morais, P. C. de, Cruz, J. M. R., Soler, M. A. G., Quivy, A. A., & Leite, J. R. (2000). Optically determined carrier transport in InGaAs-GaAs quantum wells. In Resumos. São Paulo: SBF. -
NLM
Monte AFG do, Silva SW da, Morais PC de, Cruz JMR, Soler MAG, Quivy AA, Leite JR. Optically determined carrier transport in InGaAs-GaAs quantum wells. Resumos. 2000 ; -
Vancouver
Monte AFG do, Silva SW da, Morais PC de, Cruz JMR, Soler MAG, Quivy AA, Leite JR. Optically determined carrier transport in InGaAs-GaAs quantum wells. Resumos. 2000 ; - Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates
- Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
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