Growth of 'SI' gama-doping superlattice in 'GA''AS' (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1996
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
LIMA, A. P. et al. Growth of 'SI' gama-doping superlattice in 'GA''AS'. 1996, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 17 mar. 2026. -
APA
Lima, A. P., Quivy, A. A., Leite, J. R., & Pudenzi, M. A. A. (1996). Growth of 'SI' gama-doping superlattice in 'GA''AS'. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Lima AP, Quivy AA, Leite JR, Pudenzi MAA. Growth of 'SI' gama-doping superlattice in 'GA''AS'. Resumos. 1996 ;[citado 2026 mar. 17 ] -
Vancouver
Lima AP, Quivy AA, Leite JR, Pudenzi MAA. Growth of 'SI' gama-doping superlattice in 'GA''AS'. Resumos. 1996 ;[citado 2026 mar. 17 ] - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
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